M54HCT688F1R中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M54/74HCT688 utilizes silicon gate C2MOS technology to achieve operating speeds equivalent to LSTTL devices. Along with the low power dissipation and high noise immunity of standard C2MOS integrated circuit, it possesses the driving capability of 10 LSTTL load.

■ HIGH SPEED

tPD = 17 ns (TYP.) AT VCC = 5 V

■ LOW POWER DISSIPATION

ICC = 4 μA (MAX.) AT TA = 25 °C

■ COMPATIBLE WITH TTL OUTPUTS

VIH = 2V (MIN.) VIL = 0.8V (MAX)

■ OUTPUT DRIVE CAPABILITY

10 LSTTL LOADS

■ SYMMETRICAL OUTPUT IMPEDANCE

|IOH| = IOL = 4 mA (MIN.)

■ BALANCED PROPAGATION DELAYS

tPLH = tPHL

■ PIN AND FUNCTION COMPATIBLE

WITH 54/74LS688