M58BW016DB8T3FT中文資料NUMONYX數(shù)據(jù)手冊PDF規(guī)格書

Description

The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

Features

Supply voltage

–VDD= 2.7 V to 3.6 V for program, erase and read

–VDDQ= VDDQIN= 2.4 V to 3.6 V for I/O buffers

–VPP= 12 V for fast program (optional)

High performance

– Access times: 70, 80 ns

– 56 MHz effective zero wait-state burst read

– Synchronous burst read

– Asynchronous page read

Hardware block protection

–WPpin for write protect of the 2 outermost parameter blocks and all main blocks

–RPpin for write protect of all blocks

Optimized for FDI drivers

– Fast program / erase suspend latency time < 6 μs

– Common Flash interface

Memory blocks

– 8 parameters blocks (top or bottom)

– 31 main blocks

Low power consumption

– 5 μA typical deep power-down

– 60 μA typical standby for M58BW016DT/B

150 μA typical standby for M58BW016FT/B

– Automatic standby after asynchronous read

Electronic signature

– Manufacturer code: 20h

– Top device code: 8836h

– Bottom device code: 8835h

100 K write/erase cycling + 20 years data retention (minimum)

High reliability level with over 1 M write/erase cycling sustained