M58LW032集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

M58LW032屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M58LW032存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The M58LW032 is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY

■ WIDE x16 DATA BUS for HIGH BANDWIDTH

■ SUPPLY VOLTAGE

– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

– VDDQ = 1.8V to VDD for I/O Buffers

■ SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

– Asynchronous Random Read

– Asynchronous Address Latch Controlled Read

– Page Read

■ ACCESS TIME

– Synchronous Burst Read up to 56MHz

– Asynchronous Page Mode Read 90/25ns and 110/25ns

– Random Read 90ns, 110ns.

■ PROGRAMMING TIME

– 16 Word Write Buffer

– 18μs Word effective programming time

■ 64 UNIFORM 32 KWord MEMORY BLOCKS

■ BLOCK PROTECTION/ UNPROTECTION

■ PROGRAM and ERASE SUSPEND

■ 128 bit PROTECTION REGISTER

■ COMMON FLASH INTERFACE

■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW032A: 8816h