M58LW032D110N6集成電路（IC）的存儲器規(guī)格書PDF中文資料

M58LW032D110N6屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團制造生產(chǎn)的M58LW032D110N6存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

The M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.

FEATURES SUMMARY

■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH

■ SUPPLY VOLTAGE

– VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations

■ ACCESS TIME

– Random Read 90ns,110ns

– Page Mode Read 90ns/25ns, 110ns/25ns

■ PROGRAMMING TIME

– 16 Word Write Buffer

– 12μs Word effective programming time

■ 32 UNIFORM 64 KWord/128KByte MEMORY BLOCKS

■ ENHANCED SECURITY

– Block Protection/ Unprotection

– VPEN signal for Program Erase Enable

– 128 bit Protection Register with 64 bit Unique Code in OTP area

■ PROGRAM and ERASE SUSPEND

■ 128 bit PROTECTION REGISTER

■ COMMON FLASH INTERFACE

■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW032D: 0016h

■ PACKAGES

– Compliant with Lead-Free Soldering Processes

– Lead-Free Versions