M58LW064集成電路（IC）的存儲器規(guī)格書PDF中文資料

M58LW064屬于集成電路（IC）的存儲器。由意法半導體集團制造生產(chǎn)的M58LW064存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

DESCRIPTION

The M58LW064 is a non-volatile Flash memory that may be erased electrically at the block level and programmed in-system on a 16 Word or 8 Double-Word basis using a 2.7V to 3.6V supply for the circuit and a supply down to 1.8V for the Input and Output buffers. The M58LW064A is organised as 4M by 16 bit. The M58LW064B has 4M by 16 bit or 2M by 32 bit organisation selectable by the Word Organisation WORD input. Both devices are internally configured as 64 blocks of 1 Mbit each.

■ M58LW064A x16 organisation,

■ M58LW064B x16/x32 selectable

■ MULTI-BIT CELL for HIGH DENSITY and LOW COST

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Supply Voltage

– VDDQ = 2.7V to 3.6V or 1.8V to 2.5V Input/Output Supply Voltage

■ PIPELINED SYNCHRONOUS BURST INTERFACE

■ SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

– Asynchronous Random and Latch Enabled

Controlled Read, with Page Read

■ ACCESS TIME

– Synchronous Burst Read up to 66MHz

– Asynchronous Page Mode Read 150/25ns, Random Read 150ns

■ PROGRAMMING TIME

– 16 Word or 8 Double-Word Write Buffer

– 12us Word effective programming time

■ MEMORY BLOCKS

– 64 Equal blocks of 1 Mbit

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code M58LW064A: 17h

– Device Code M58LW064B: 14h