M58LW064D110N1T中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

SUMMARY DESCRIPTION

The M58LW064D is a 64 Mbit (8Mb x 8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply.

FEATURES SUMMARY

■ WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH

■ SUPPLY VOLTAGE

– VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations

■ ACCESS TIME

– Random Read 110ns

– Page Mode Read 110/25ns

■ PROGRAMMING TIME

– 16 Word Write Buffer

– 12μs Word effective programming time

■ 64 UNIFORM 64 KWord/128KByte MEMORY BLOCKS

■ ENHANCED SECURITY

– Block Protection/ Unprotection

– VPEN signal for Program Erase Enable

– 128 bit Protection Register with 64 bit Unique Code in OTP area

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW064D: 0017h

■ PACKAGES

– Compliant with Lead-Free Soldering Processes

– Lead-Free Versions