M58LW128B150N6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

SUMMARY DESCRIPTION

M58LW128 is a 128 Mbit (8Mb x16 or 4Mb x32) non-volatile memory that can be read, erased and reprogrammed. These operations can be per formed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY

■ WIDE DATA BUS for HIGH BANDWIDTH

– M58LW128A: x16

– M58LW128B: x16/x32

■ SUPPLY VOLTAGE

– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

– VDDQ = 1.8 to VDD for I/O Buffers

■ SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

– Pipelined Synchronous Burst Read

– Asynchronous Random Read

– Asynchronous Address Latch Controlled Read

– Page Read

■ ACCESS TIME

– Synchronous Burst Read up to 66MHz

– Asynchronous Page Mode Read 150/25ns

– Random Read 150ns

■ PROGRAMMING TIME

– 16 Word or 8 Double-Word Write Buffer

– 12μs Word effective programming time

■ 128 UNIFORM 64 KWord MEMORY BLOCKS

■ BLOCK PROTECTION/ UNPROTECTION

■ PROGRAM and ERASE SUSPEND

■ OTP SECURITY AREA

■ COMMON FLASH INTERFACE

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW128A: 8818h

– Device Code M58LW128B: 8819h