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M58MR016C

16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION TheM58MR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.7Vto2.0VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M58MR016CZC

16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION TheM58MR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.7Vto2.0VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M58MR016CZC

16Mbit1Mbx16,MuxI/O,DualBank,Burst1.8VSupplyFlashMemory

DESCRIPTION TheM58MR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.7Vto2.0VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M58MR016D

16Mbit1Mbx16,MuxI/O,DualBank,Burst1.8VSupplyFlashMemory

DESCRIPTION TheM58MR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.7Vto2.0VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M58MR016DZC

16Mbit1Mbx16,MuxI/O,DualBank,Burst1.8VSupplyFlashMemory

DESCRIPTION TheM58MR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.7Vto2.0VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M58MR016-ZCT

16Mbit1Mbx16,MuxI/O,DualBank,Burst1.8VSupplyFlashMemory

DESCRIPTION TheM58MR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.7Vto2.0VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    M58MR016C

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
24+
3000
公司存貨
 詢價(jià)
ST
23+
FBGA
7750
全新原裝優(yōu)勢
 詢價(jià)
ST
16+
BGA
1640
原裝現(xiàn)貨假一罰十
 詢價(jià)
ST
23+
FBGA
5000
原裝正品,假一罰十
 詢價(jià)
ST
22+
BGA
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價(jià)
ST
2021+
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
ST
23+
QFP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價(jià)
ST
FBGA
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
ST/意法
23+
BGA
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
ST
BGA
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
更多M58MR016C供應(yīng)商 更新時(shí)間2024-11-8 16:00:00

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