M58WR064FT80ZB6E中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

SUMMARY DESCRIPTION

The M58WR064FT/B is a 64 Mbit (4Mbit x16) nonvolatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2V VDD supply for the circuitry and a 1.7V to 2.24V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. The VPP pin can also be used as a control pin to provide absolute protection against program or erase.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 1.7V to 2V for Program, Erase and Read

– VDDQ = 1.7V to 2.24V for I/O Buffers

– VPP = 12V for fast Program (optional)

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode: 66MHz

– Asynchronous/ Synchronous Page Read mode

– Random Access: 60ns, 70ns, 80ns

■ SYNCHRONOUS BURST READ SUSPEND

■ PROGRAMMING TIME

– 8μs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

■ MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■ DUAL OPERATIONS

– Program Erase in one Bank while Read in others

– No delay between Read and Write operations

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

■ SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Codes: M58WR064FT (Top): 8810h M58WR064FB (Bottom): 8811h

■ PACKAGE

– Compliant with Lead-Free Soldering Processes

– Lead-Free Versions