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首頁 >M59DR016D>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
M59DR016D	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016D100ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016D100ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016D120ZB1T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016D120ZB6T	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016DZB	文件：240.77 Kbytes Page：37 Pages	16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016C	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016CZB	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016DZB	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS
M59DR016-ZBT	文件：240.77 Kbytes Page：37 Pages	16Mbit1Mbx16,DualBank,Page1.8VSupplyFlashMemory DESCRIPTION TheM59DR016isa16Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團	STMICROELECTRONICS

詳細(xì)參數(shù)

型號：
M59DR016D
制造商：
STMICROELECTRONICS
制造商全稱：
STMicroelectronics
功能描述：
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
中科航電（深圳）電子集團有限公司	M59DR016EC85ZB6	ST		BGA-48D	93480	集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)	詢價
深圳市和悅電子貿(mào)易有限公司	M59DR032	ST	0331+	LBGA	529		詢價
深圳市一線半導(dǎo)體有限公司	M59DR032A		24+	BGA	3000	公司存貨	詢價
深圳市卓越微芯電子有限公司	M59DR032A	ST	2020+	BGA	4500	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
華富測量(深圳)傳感技術(shù)有限公司	M59DR032A	ST	2138+	BGA	8960	專營BGA,QFP原裝現(xiàn)貨,假一賠十	詢價
深圳市恒達億科技有限公司	M59DR032A	ST	23+	BGA	3000	全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!	詢價
深圳市科恒偉業(yè)電子有限公司	m59dr032a120zb6	st	1815+	fbga	6528	只做原裝正品假一賠十為客戶做到零風(fēng)險!!	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	M59DR032A120ZB6	ST/意法	23+	BGA	3000	一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價
深圳市弘為電子有限公司	M59DR032A-120ZB6	ST	16+	BGA	7748	原裝現(xiàn)貨假一罰十	詢價
深圳市創(chuàng)盛芯科技有限公司	M59DR032A-120ZB6	ST/意法	24+		81	原裝現(xiàn)貨假一賠十	詢價

更多M59DR016D供應(yīng)商更新時間2024-11-19 9:50:00

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