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M59DR032E-ZFE

32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032A

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032AN

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032AZB

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032B

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032BN

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032BZB

32Mbit2Mbx16,DualBank,PageLowVoltageFlashMemory

DESCRIPTION TheM59DR032isa32Mbitnon-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-byWordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitry.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032EA

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032EB

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032E-ZB

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032E-ZBE

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032E-ZBF

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032E-ZBT

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032E-ZF

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032E-ZFF

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

M59DR032E-ZFT

32Mbit(2Mbx16,DualBank,Page)1.8VSupplyFlashMemory

SUMMARYDESCRIPTION TheM59DR032Eisa32Mbit(2Mbitx16)non-volatileFlashmemorythatmaybeerasedelectricallyatblocklevelandprogrammedin-systemonaWord-by-Wordbasisusinga1.65Vto2.2VVDDsupplyforthecircuitryanda1.65Vto2.2VVDDQsupplyfortheInput/Outputpins.Anopt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    M59DR032E-ZFE

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    32 Mbit(2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
2018+
BGA
26976
代理原裝現(xiàn)貨/特價(jià)熱賣!
 詢價(jià)
ST/意法
23+
BGA
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價(jià)
ST
BGA
93480
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價(jià)
ST/意法
23+
BGA
10880
原裝正品，支持實(shí)單
 詢價(jià)
ST
22+
BGA
8700
原裝現(xiàn)貨
 詢價(jià)
ST
2005
BGA
28
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ST
2231+
BGA
3414
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
ST
24+
BGA
3414
詢價(jià)
ST
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
 詢價(jià)
ST
BGA
6000
原裝現(xiàn)貨,長(zhǎng)期供應(yīng),終端可賬期
 詢價(jià)
更多M59DR032E-ZFE供應(yīng)商 更新時(shí)間2024-11-19 9:00:00

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