M59MR032-GCT中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

■ SUPPLY VOLTAGE

– VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read

– VPP = 12V for fast Program (optional)

■ MULTIPLEXED ADDRESS/DATA

■ SYNCHRONOUS / ASYNCHRONOUS READ

– Configurable Burst mode Read

– Page mode Read (4 Words Page)

– Random Access: 100ns

■ PROGRAMMING TIME

– 10μs by Word typical

– Double Word Programming Option

■ MEMORY BLOCKS

– Dual Bank Memory Array: 8 Mbit - 24 Mbit

– Parameter Blocks (Top or Bottom location)

■ DUAL BANK OPERATIONS

– Read within one Bank while Program or Erase within the other

– No delay between Read and Write operations

■ BLOCK PROTECTION/UNPROTECTION

– All Blocks protected at Power-up

– Any combination of Blocks can be protected

■ COMMON FLASH INTERFACE (CFI)

■ 64 bit SECURITY CODE

■ ERASE SUSPEND and RESUME MODES

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M59MR032C: A4h

– Bottom Device Code, M59MR032D: A5h