M5M29F25611VP中文資料三菱電機(jī)數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The MITSUBISHI M5M29F25611 is a CMOS Flash Memory with AND type multi-level memory cells.

It has fully automatic programming and erase capabilities with a single 3.3V power supply.

The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048+64) bytes.

Available sectors of M5M29F25611 are more than 16,057(98 of all sector address) and less than 16,384 sectors.

FEATURES

● On-board single power supply(Vcc) : Vcc=3.0V to 3.6V

● Organization

AND Flash Memory : (2048+64)bytes x (More than 16,057 sectors)

Data register : (2048+64)bytes

● Multi-level memory cell: 2bit / per memory cell.

● Automatic programming : Sector program time : 2.5 ms typ.

System bus free Address,data latch function

Internal automatic program verify function

Status data polling function

● Automatic erase : Single sector erase time : 1.0 ms typ.

System bus free Internal automatic erase verify function

Status data polling function

● Erase mode : Single sector erase ((2048+64)byte unit)

● Fast access time : Serial read First access time : 50μs max. Serial access time : 50ns max.

● Low power dissipation :

ICC2 = 30mA typ. / 50mA max. (Read)

ISB2 = 30μA typ. / 50μA max. (Standby)

ICC3 = 20mA typ. / 40mA max. (Program)

ICC4 = 20mA typ. / 40mA max. (Erase)

ISB3 = 1μA typ. / 10μA max. (Deep standby)

● Package : 48pin-TSOP(I) (12.0 x 20.0mm2)