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M5M51008BVP-10VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008BVP-10VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008BVP-12VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008BVP-12VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008BVP-15VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008BVP-15VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008BVP-70VL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008BVP-70VLL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION TheM5M51008BFP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhichare fabricatedusinghigh-performancetriplepolysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultinahighdensityandlowpowerstaticRAM.T

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CRV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008CVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008CP,FP,VP,RV,KV,KRarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighde

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DFP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

MitsubishiMitsubishi Electric Semiconductor

三菱電機三菱電機株式會社

M5M51008DKR

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DKV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DRV

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M51008DVP

1048576-BIT(131072-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M51008DP,FP,VP,RV,KVarea1048576-bitCMOSstaticRAMorganizedas131072wordby8-bitwhicharefabricatedusinghigh-performancequadruple-polysiliconanddoublemetalCMOStechnology.Theuseofthinfilmtransistor(TFT)loadcellsandCMOSperipheryresultinahighdensi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數

  • 型號：

    M5M51008BVP

  • 制造商：

    MITSUBISHI

  • 制造商全稱：

    Mitsubishi Electric Semiconductor

  • 功能描述：

    1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

供應商型號品牌批號封裝庫存備注價格
MITSUBISHI
24+
TSSOP-32
4650
詢價
MITSUBISHI
23+
NA
25060
只做進口原裝,終端工廠免費送樣
 詢價
MITSUBISHI
19+
TSOP
32000
原裝正品,現貨特價
 詢價
MISUBISHI
23+
TSOP
8000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
MITSUBISHI
22+
TSOP
12245
現貨,原廠原裝假一罰十!
 詢價
MITSUBISHI
24+
TSOP
12000
進口原裝正品現貨
 詢價
24+
3000
公司存貨
 詢價
MIT
23+
TSOP
5000
原裝正品,假一罰十
 詢價
MITSUBISHI
24+
9850
公司原裝現貨/隨時可以發(fā)貨
 詢價
MIT
2023+
TSOP
3875
全新原廠原裝產品、公司現貨銷售
 詢價
更多M5M51008BVP供應商 更新時間2025-1-16 16:06:00

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