M5M51016RT-12VLL中文資料三菱電機(jī)數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.

They are low stand-by current and low operation current and ideal for the battery back-up application.

The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES

● Single +3.0V power supply

● Low stand-by current 0.3μA (typ.)

● Directly TTL compatible : All inputs and outputs

● Easy memory expansion and power down by CS, BC1 & BC2

● Data hold on +2V power supply

● Three-state outputs : OR-tie capability

● OE prevents data contention in the I/O bus

● Common data I/O

● Package

M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION

Small capacity memory units