M5M51R16AWG-10LI中文資料三菱電機(jī)數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance CMOS technology. The use of CMOS cells and periphery results in a high density and low power static RAM.

The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application.

The M5M51R16AWG is packaged in a 48-pin chip scale package which is a high reliability and high density surface mount device (SMD). Using this type of devices, it becomes very easy to design a small system.

The M5M51R16AWG is fully compatible with the M5M51R16WG.

FEATURE

? Separate control of lower and upper bytes by BC1 and BC2

? Easy memory expansion and power down by S,BC1 and BC2

? Single +1.8V~2.7V power supply

? Directly TTL compatible : All inputs and outputs

? Data hold on +1.0V power supply

? Three-state outputs : OR-tie capability

? Common data I/O

? OE prevents data contention in the I/O bus

? Package

48-pin chip scale package(CSP)

Ball pitch : 0.75mm

Package size: 7.0mm x 8.5mm

? Low power down current 0.05μA(typ.)

APPLICATION

Small capacity memory units.