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M5M5256DFP-70LLIBM

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70G

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70GI

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70LL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70LL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DFP-70LLI

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70VLL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DFP-70VLL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DFP-70VLL-W

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DFP-70VXL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DFP-70VXL-I

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycurre

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

M5M5256DFP-70XG

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DFP,VPis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

M5M5256DFP-70XL

262144-BIT(32768-WORDBY8-BIT)CMOSSTATICRAM

DESCRIPTION TheM5M5256DP,FP,VP,RVis262,144-bitCMOSstaticRAMsorganizedas32,768-wordsby8-bitswhichisfabricatedusinghigh-performance3polysiliconCMOStechnology.TheuseofresistiveloadNMOScellsandCMOSperipheryresultsinahighdensityandlowpowerstaticRAM.Stand-bycur

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會社

詳細(xì)參數(shù)

  • 型號：

    M5M5256DFP-70LLIBM

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    SRAM Chip Async Single 5V 256K-Bit 32K x 8 70ns 28-Pin SOP

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS
22+
NA
30000
100%全新原裝 假一賠十
 詢價
RENESAS/瑞薩
23+
SOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
2022
SOP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
RENESAS/瑞薩
21+
SOP
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
RENESAS/瑞薩
23+
SOP
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
24+
3000
公司存貨
 詢價
MISUMICHI
23+
SOP
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
 詢價
Renesas
24+
28SOP
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
MITSUBISHI/三菱
SOP28
貨真價實,假一罰十
25000
詢價
MITSUBISHI/三菱
22+
SOP28
40256
本公司只做原裝進(jìn)口現(xiàn)貨
 詢價
更多M5M5256DFP-70LLIBM供應(yīng)商 更新時間2025-1-3 11:30:00

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