M5M5256DRV-70LL中文資料三菱電機(jī)數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The M5M5256DP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface.

Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURE

? Single +5V power supply

? No clocks, no refresh

? Data-Hold on +2.0V power supply

? Directly TTL compatible : all inputs and outputs

? Three-state outputs : OR-tie capability

? /OE prevents data contention in the I/O bus

? Common Data I/O

? Battery backup capability

? Low stand-by current··········0.05μA(typ.)

APPLICATION

Small capacity memory units