M74HC595YRM13TR集成電路（IC）的移位寄存器規(guī)格書PDF中文資料

M74HC595YRM13TR屬于集成電路（IC）的移位寄存器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M74HC595YRM13TR移位寄存器移位寄存器是低級邏輯器件，通常用于在串行和并行方式之間轉(zhuǎn)換數(shù)字邏輯信號形式的數(shù)據(jù)，或在數(shù)字字內(nèi)移動數(shù)據(jù)位的位置。移位寄存器通常使用集成到一個設(shè)備中的一組觸發(fā)器來實現(xiàn)，常用于集成度更高的邏輯器件，但仍可用于 I/O 擴(kuò)展等應(yīng)用，在這些應(yīng)用中離散形式的函數(shù)可能會非常有用。

Description

The M74HC595 device is a high speed CMOS

8-bit shift register with output latches (3-state)

fabricated with silicon gate C2MOS technology.

This device contains an 8-bit serial in, parallel out

shift register that feeds an 8-bit D-type storage

register. The storage register has 8 3-state

outputs. Separate clocks are provided for both the

shift register and the storage register.

The shift register has direct overriding clear, serial

input, and serial output (standard) pins for

cascading. Both the shift register and storage

register use positive edge triggered clocks. If both

clocks are connected together, the shift register

state will always be one clock pulse ahead of the

storage register.

All inputs are equipped with protection circuits

against static discharge and transient excess

voltage.

Features

? High speed: fMAX = 59 MHz (typ.) at VCC = 6 V

? Low power dissipation: ICC = 4 μA (max.)

at TA= 25 °C

? High noise immunity:

VNIH = VNIL = 28 VCC (min.)

? Symmetrical output impedance:

– |IOH| = IOL = 6 mA (min.) for QA to QH

– |IOH| = IOL = 4 mA (min.) for QH’

? Balanced propagation delays: tPLH ? tPHL

? Wide operating voltage range:

VCC (opr.) = 2 V to 6 V

? Pin and function compatible with 74 series 595

? ESD performance

– HBM: 2 kV

– MM: 200 V

– CDM: 1 kV

Applications

? Automotive

? Industrial

? Computer

? Consumer