M93C76-WMN6P集成電路（IC）的存儲器規(guī)格書PDF中文資料

M93C76-WMN6P屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團制造生產(chǎn)的M93C76-WMN6P存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The M93C86, M93C76, M93C66, M93C56 and M93C46 are electrically erasable programmable memory (EEPROM) devices. They are accessed through a Serial Data input (D) and Serial Data output (Q) using the MICROWIRE bus protocol.

Features

● Industry standard MICROWIRE bus

● Single supply voltage:

– 4.5 V to 5.5 V for M93Cx6

– 2.5 V to 5.5 V for M93Cx6-W

– 1.8 V to 5.5 V for M93Cx6-R

● Dual organization: by word (x16) or byte (x8)

● Programming instructions that work on: byte, word or entire memory

● Self-timed programming cycle with auto erase: 5 ms

● READY/BUSY signal during programming

● 2 MHz clock rate

● Sequential read operation

● Enhanced ESD/latch-up behavior

● More than 1 million write cycles

● More than 40 year data retention

● Packages

– ECOPACK? (RoHS compliant)