M93S66-W集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

M93S66-W屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M93S66-W存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

This specification covers a range of 4K, 2K, 1K bit serial Electrically Erasable Programmable Memory (EEPROM) products (respectively for M93S66, M93S56, M93S46). In this text, these products are collectively referred to as M93Sx6.

FEATURES SUMMARY

■ Industry Standard MICROWIRE Bus

■ Single Supply Voltage:

– 4.5 to 5.5V for M93Sx6

– 2.5 to 5.5V for M93Sx6-W

– 1.8 to 5.5V for M93Sx6-R

■ Single Organization: by Word (x16)

■ Programming Instructions that work on: Word

or Entire Memory

■ Self-timed Programming Cycle with AutoErase

■ User Defined Write Protected Area

■ Page Write Mode (4 words)

■ Ready/Busy Signal During Programming

■ Speed:

– 1MHz Clock Rate, 10ms Write Time

(Current product, identified by process

identification letter F or M)

– 2MHz Clock Rate, 5ms Write Time (New

Product, identified by process

identification letter W or G)

■ Sequential Read Operation

■ Enhanced ESD/Latch-Up Behavior

■ More than 1 Million Erase/Write Cycles

■ More than 40 Year Data Retention