M95080-RMN6T集成電路（IC）的存儲(chǔ)器規(guī)格書(shū)PDF中文資料

M95080-RMN6T屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M95080-RMN6T存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

SUMMARY DESCRIPTION

These electrically erasable programmable memory (EEPROM) devices are accessed by a high speed SPI-compatible bus. The memory array is organized as 8192 x 8 bit (M95640), and 4096 x 8 bit (M95320).

FEATURES SUMMARY

■ Compatible with SPI Bus Serial Interface (Positive Clock SPI Modes)

■ Single Supply Voltage:

– 4.5 to 5.5V for M95xxx

– 2.5 to 5.5V for M95xxx-W

– 1.8 to 5.5V for M95xxx-R

■ 10MHz, 5MHz or 2MHz clock rate (depending on ordering options)

■ 5ms or 10ms Write Time (depending on ordering options)

■ Status Register

■ Hardware Protection of the Status Register

■ BYTE and PAGE WRITE (up to 32 Bytes)

■ Self-Timed Programming Cycle

■ Adjustable Size Read-Only EEPROM Area

■ Enhanced ESD Protection

■ More than 100,000 or 1 million Erase/Write Cycles (depending on ordering options)

■ More than 40 Year Data Retention