M95512-DR集成電路（IC）的存儲(chǔ)器規(guī)格書PDF中文資料

M95512-DR屬于集成電路（IC）的存儲(chǔ)器。由意法半導(dǎo)體集團(tuán)制造生產(chǎn)的M95512-DR存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The M95512-W, M95512-R and M95512-DR are electrically erasable programmable memory (EEPROM) devices accessed by a high-speed SPI-compatible bus. In the rest of the document these devices are referred to as M95512, unless otherwise specified. The M95512-DR also offers an additional page, named the Identification Page (128 bytes) which can be written and (later) permanently locked in Read-only mode. This Identification Page offers flexibility in the application board production line, as it can be used to store unique identification parameters and/or parameters specific to the production line.

Features

■ Compatible with the Serial Peripheral Interface (SPI) bus

■ Memory array

– 512 Kb (64 Kbytes) of EEPROM

– Page size: 128 bytes

■ Additional Write lockable Page (Identification page)

■ Write

– Byte Write within 5 ms

– Page Write within 5 ms

■ Write Protect: quarter, half or whole memory array

■ High-speed clock frequency (20 MHz)

■ Single supply voltage: 1.8 V to 5.5 V

■ More than 1 Million Write cycles

■ More than 40-year data retention

■ Enhanced ESD Protection

■ Packages

– ECOPACK2? (RoHS compliant and Halogen-free)