M95512-DRMN8TP集成電路（IC）的存儲器規(guī)格書PDF中文資料

M95512-DRMN8TP屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團制造生產(chǎn)的M95512-DRMN8TP存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Features

? Compatible with the Serial Peripheral Interface

(SPI) bus

? Memory array

– 512 Kbit (64 Kbytes) of EEPROM

– Page size: 128 bytes

– Write protection by block: 1/4, 1/2 or whole

memory

– Additional Write lockable Page

(Identification page)

? Extended temperature and voltage range

– Up to 105 °C (VCC from 1.8 V to 5.5 V)

? High speed clock frequency

– 16 MHz for VCC ≥ 4.5 V

– 10 MHz for VCC ≥ 2.5 V

– 5 MHz for VCC ≥ 1.8 V

? Schmitt trigger inputs for noise filtering

? Short Write cycle time

– Byte Write within 4 ms

– Page Write within 4 ms

? Write cycle endurance

– 4 million Write cycles at 25 °C

– 1.2 million Write cycles at 85 °C

– 900 k Write cycles at 105 °C

? Data retention

– more than 50 years at 105 °C

– 200 years at 55 °C

? ESD Protection (Human Body Model)

– 4000 V

? Packages

– RoHS-compliant and halogen-free

(ECOPACK2?)