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MA3055

包裝：散裝 封裝/外殼：不銹鋼套管 類別：傳感器，變送器 磁性傳感器 - 位置，接近，速度（模塊） 描述：SENSOR VRS SINE WAVE WIRE LEADS

Honeywell Sensing and Productivity Solutions

Honeywell Sensing and Productivity Solutions

Honeywell Sensing and Productivity Solutions

MA3055S10

包裝：盒 封裝/外殼：不銹鋼套管 類別：傳感器，變送器 磁性傳感器 - 位置，接近，速度（模塊） 描述：SENSOR VRS SINE WAVE WIRE LEADS

Honeywell Sensing and Productivity Solutions

Honeywell Sensing and Productivity Solutions

Honeywell Sensing and Productivity Solutions

MAX3055ASD

?80VFault-Protected/TolerantCANTransceiversforIn-CarApplications

GeneralDescription TheMAX3054/MAX3055/MAX3056areinterfacesbetweentheprotocolcontrollerandthephysicalwiresofthebuslinesinacontrollerareanetwork(CAN).Thedevicesprovidedifferentialtransmitcapabilityandswitchtosingle-modeifcertainfaultconditionsoccur.TheMAX3054/

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MJ3055

BipolarNPNDeviceinaHermeticallysealedTO3MetalPackage

SEME-LAB

Seme LAB

MJ3055

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJB3055

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

ComplementaryPowerTransistors

MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?Strai

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4)

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

MJD3055

GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix) ?ElectricallySimilartoPopularMJE3055T ?DCCurrentGainSpecifiedto10A ?HighCurrentGain-

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJD3055

COMPLEMENTARYPOWERTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

MJD3055

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

TRANSISTOR(NPN)

FS

First Silicon Co., Ltd

MJD3055

iscSiliconNPNPowerTransistor

DESCRIPTION ?ExcellentSafeOperatingArea ?Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A ?ComplementtoTypeMJD2955 ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●ElectricallySimiartoMJE3055 ●DCCurrentGainSpecifiedto10A

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

MJD3055

TO-252-2LPlastic-EncapsulateTransistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055G

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    MA3055

  • 制造商：

    Honeywell Sensing and Productivity Solutions

  • 類別：

    傳感器，變送器 > 磁性傳感器 - 位置，接近，速度（模塊）

  • 系列：

    MA3055

  • 包裝：

    散裝

  • 類型：

    VRS（無源）

  • 輸出類型：

    正弦波

  • 致動(dòng)器材料：

    鐵金屬齒輪齒

  • 端接樣式：

    導(dǎo)線引線

  • 工作溫度：

    -73°C ~ 230°C（TA）

  • 封裝/外殼：

    不銹鋼套管

  • 描述：

    SENSOR VRS SINE WAVE WIRE LEADS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
Honeywell
新
7
全新原裝 貨期兩周
 詢價(jià)
Honeywell
2022+
3
全新原裝 貨期兩周
 詢價(jià)
Honeywell
2020+
N/A
34
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
Honeywell(霍尼韋爾)
2112+
Barrel
115000
nan一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單
 詢價(jià)
HONEYWELL
20+
傳感器
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
Honeywell
22+
NA
34
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
無源/磁性速度傳感器
23+
HONEYWLL
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
Honeywell
22+
Na
1208
航宇科工半導(dǎo)體-中國航天科工集團(tuán)戰(zhàn)略合作伙伴!
 詢價(jià)
Honeywell
2022+
NA
25000
100%進(jìn)口原裝正品現(xiàn)貨,公司原裝現(xiàn)貨眾多歡迎加微信咨
 詢價(jià)
HONEYWELL
23+
NA
200
速度傳感器
 詢價(jià)
更多MA3055供應(yīng)商 更新時(shí)間2024-10-24 16:05:00

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