Description

M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabricated on a OMCVD epitaxial wafer using a process optimized for high device uniformity and extremely low parasitics. The diode exhibits low series resistance, 4?, low capacitance, 28fF, and an extremely fast switching speed of 5nS. It is fully passivated with silicon nitride and has an additional polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air bridges during handling and assembly.

Features

? Low Series Resistance

? Low Capacitance

? Millimeter Wave Switching

? Millimeter Wave Cutoff Frequency

? 5 Nanosecond Switching Speed

? Can be Driven by a Buffered +5V TTL

? Silicon Nitride Passivation

? Polyimide Scratch Protection

? RoHS Compliant

Applications

The ultra low capacitance of the MA4AGBLP912

device makes it ideally suited for use through

W-band. The low RC product and low profile of the

beamlead PIN diode allows for use in microwave

and millimeter wave switch designs, where low

insertion loss and high isolation are required. The

operating bias conditions of +10mA for the low loss

state, and 0V, for the isolation state permits the use

of a simple +5V TTL gate driver. AlGaAs, beamlead

diodes, can be used in switching arrays on radar

systems, high speed ECM circuits, optical

switching networks, instrumentation, and other

wideband multi-throw switch assemblies.