MA4AGSW3RF/IF射頻/中頻RFID的射頻開關(guān)規(guī)格書PDF中文資料

Description

M/A-COM’s MA4AGSW3 is an Aluminum-Gallium-Arsenide anode enhanced, SP3T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, which produce less loss than conventional GaAs processes, as much as 0.3 dB reduction in insertion loss at 50 GHz. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes themselves exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coating prevents damage to the junction and the anode airbridges during handling. Off-chip bias circuitry is required and allows maximum design flexibility.

Features

■ Ultra Broad Bandwidth: 50 MHz to 50 GHz

■ Functional bandwidth : 50 MHz to 70 GHz

■ 0.8 dB Insertion Loss, 31 dB Isolation at 50 GHz

■ Low Current consumption:

-10 mA for Low Loss State

+10 mA for Isolation

■ M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology

■ Silicon Nitride Passivation

■ Polymide Scratch protection