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MSM8128

128Kx8SRAM

MOSAIC

mosaic

RT8128A

HighEfficiencySynchronousBuckPWMController

RichTekRichtek Technology Corporation

立锜科技股份有限公司

RT8128AGSP

HighEfficiencySynchronousBuckPWMController

RichTekRichtek Technology Corporation

立锜科技股份有限公司

RT8128C

HighEfficiencySynchronousBuckPWMController

RichTekRichtek Technology Corporation

立锜科技股份有限公司

RT8128CGSP

HighEfficiencySynchronousBuckPWMController

RichTekRichtek Technology Corporation

立锜科技股份有限公司

TPC8128

FieldEffectTransistorSiliconPChannelMOSType(U-MOS??

LithiumIonBatteryApplications PowerManagementSwitchApplications ?Smallfootprintduetosmallandthinpackage ?Lowdrain-sourceON-resistance:RDS(ON)=3.9mΩ(typ.) ?Lowleakagecurrent:IDSS=?10μA(max)(VDS=?30V) ?Enhancementmode:Vth=?0.8to?2.0V(VDS=?10V,ID=

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPC8128

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPCA8128

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TPCA8128

LithiumIonBatteryApplicationsPowerManagementSwitchApplications

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

UPC8128TA

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC8128TA

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V ?Supplyvoltage:VCC=2.4to3.3V ?Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC8128TB

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES ?Supplyvoltage:VCC=2.4to3.3V ?Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V ?Highefficiency:UPC8128TB;PO(1dB)=?4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPC8128TB

BIPOLARANALOGINTEGRATEDCIRCUIT

CEL

California Eastern Labs

UPC8128TB

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

CEL

California Eastern Labs

UPC8128TB

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC8128TB

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheμPC8128TB,μPC8151TBandμPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UPC8128TB

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheμPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50?widebandmatchedIC.Thislowcurrentamplifieroperateson3.0

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

UTC8128

LINERINTERFRATEDCIRCUIT

UTCUnisonic Technologies

友順友順科技股份有限公司

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MOAI
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17870
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MOAI
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MSOP-28
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MOAI
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MPD
2021+
DIP
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SOD323
98215
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