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MA850GQ-P

包裝：卷帶（TR） 封裝/外殼：16-VFQFN 裸露焊盤 類別：傳感器，變送器 位置傳感器 - 角度、線性位置測量 描述：SENSOR ANGLE SMD

MPSMonolithic Power Systems Inc.

美國芯源美國芯源系統(tǒng)有限公司

MAX850

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX850ESA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX850ISA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR850

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

MBR850

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,freewhelling,andpolarityprotectionapplica

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR850

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammabilityclassification94V-0 ●Foruseinlowvoltage,highfrequenc

HY

HY ELECTRONIC CORP.

MBR850

SchottkyBarrierRectifierReverseVoltage40to200VForwardCurrent8.0A

ReverseVoltage40to200V ForwardCurrent8.0A Features ?LowPowerLoss，HighEfficiency ?LowForwardVoltageDrop ?HighCurrentCapability ?LeadandbodyaccordingwithRoHSstandard

DACHANGRugao Dachang Electronics Co., Ltd

大昌電子如皋市大昌電子有限公司

MBR850

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE40to200VoltsCURRENT8Amperes FEATURES ?PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. ?ExceedsenvironmentalstandardsofMIL-S-19500/228 ?Lowpowerloss,highefficiency. ?Lowforwrdvol

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR850

8.0ASCHOTTKYBARRIERDIODE

Features ●ClassificationRating94V-O ●PlasticCaseMaterialhasULFlammability ●GuardRingDieConstruction ●ForUseinLowVoltageApplication ●LowPowerLoss,HighEfficiency ●IdeallySuitedforAutomaticAssembly ●SchottkyBarrierChip

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

MBR850

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR850

SchottkyBarrierRectifier

DACHANGRugao Dachang Electronics Co., Ltd

大昌電子如皋市大昌電子有限公司

MBR850

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-8.0Amperes FEATURES ?TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ?Constructionutilizesvoid-freemoldedplastictechnique ?Lowreverseleakage ?Highforwardsurgecurrentcapability ?High

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達半導(dǎo)體深圳辰達半導(dǎo)體有限公司

MBR850

SCHOTTKYBARRIERRECTIFIERS

HY

HY ELECTRONIC CORP.

MBR850

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MA850GQ-P

  • 制造商：

    Monolithic Power Systems Inc.

  • 類別：

    傳感器，變送器 > 位置傳感器 - 角度、線性位置測量

  • 包裝：

    卷帶（TR）

  • 用于測量：

    角度

  • 技術(shù)：

    霍爾效應(yīng)

  • 輸出：

    PWM，SPI

  • 輸出信號：

    可編程

  • 致動器類型：

    外磁鐵，不含

  • 電壓 - 供電：

    3V ~ 3.3V

  • 安裝類型：

    表面貼裝型

  • 端接樣式：

    SMD（SMT）接片

  • 工作溫度：

    -40°C ~ 125°C

  • 封裝/外殼：

    16-VFQFN 裸露焊盤

  • 供應(yīng)商器件封裝：

    16-QFN（3x3）

  • 描述：

    SENSOR ANGLE SMD

供應(yīng)商型號品牌批號封裝庫存備注價格
Monolithic
1941+
N/A
909
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
MONOLITHIC
20+
傳感器
4796
就找我吧!--邀您體驗愉快問購元件!
 詢價
Monolithic
22+
NA
909
加我QQ或微信咨詢更多詳細信息,
 詢價
MPS/美國芯源
22+
SOP
6542
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
MPS/美國芯源
23+
QFN
90000
只做原廠渠道價格優(yōu)勢可提供技術(shù)支持
 詢價
MPS/美國芯源
22+
QFN16
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價
MPS/美國芯源
21+
QFN
6000
全新原裝 現(xiàn)貨 價優(yōu)
 詢價
MPS/美國芯源
23+
QFN16
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
MPS/美國芯源
22+
QFN
50000
只做原裝正品,假一罰十,歡迎咨詢
 詢價
MPS/美國芯源
21+
QFN16
12800
只有原裝 ,可支持實單
 詢價
更多MA850GQ-P供應(yīng)商 更新時間2024-10-25 10:18:00

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