MAAP-007649-0001A1中文資料MACOM數(shù)據(jù)手冊PDF規(guī)格書

Description

M/A-COM’s MAAP-007649-000100 2 watt power amplifier utilizes GaAs HBT technology with a +20 Volt BVceo process for improved linearity performance, power efficiency, and high reliability, in a low cost 4 mm PQFN surface mount plastic package.

The MAAP-007649-000100 incorporates an on-chip active bias network for ease of implementation, and maintains high linearity over temperature. The device operates from a single +7.5 volt supply and has a +4.5 volt reference pin for power down control capability.

The MAAP-007649-000100 has been optimized as a power amplifier for RFID Reader applications, but can also be used for infrastructure and industrial applications, since it provides consistent performance over the entire 800 to 1000 MHz band.

Features

? HIGH Gain: 19 dB (TYP.)

? HIGH P1dB: +34.0 dBm (TYP.)

? HIGH OIP3: +49.5 dBm (TYP.)

? 50 PAE @ P1dB

? Optimized Performance for RFID Bands

? >1 watt Dense Reader Mode Spectral Mask Compliance

? On-Chip Active Bias Network

? Lead Free 4 mm PQFN Surface Mount Package

? 260°C Reflow Capability

Applications

? RFID Readers

? Cellular Infrastructure

? AMPS, ISM Applications

? Multi-Carrier Applications