首頁>MAGX-000912-SB0PPR>規(guī)格書詳情

MAGX-000912-SB0PPR開發(fā)板套件編程器的射頻評(píng)估開發(fā)套件開發(fā)板規(guī)格書PDF中文資料

MAGX-000912-SB0PPR
廠商型號(hào)

MAGX-000912-SB0PPR

參數(shù)屬性

MAGX-000912-SB0PPR 包裝為盒;類別為開發(fā)板套件編程器的射頻評(píng)估開發(fā)套件開發(fā)板;產(chǎn)品描述:EVAL BOARD FOR MAGX-000912-125L0

功能描述

GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128關(guān)s Pulse, 10 Duty

文件大小

791.84 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 M/A-COM Technology Solutions, Inc.
企業(yè)簡(jiǎn)稱

MA-COM

中文名稱

M/A-COM Technology Solutions, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-21 13:53:00

MAGX-000912-SB0PPR規(guī)格書詳情

Product Description

The MAGX-000912-125L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN . Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

Features

? GaN depletion mode HEMT microwave transistor

?? Internally matched ? Common source configuration

? Broadband Class AB operation

? RoHS Compliant

? +50V Typical Operation

? MTTF of 114 years (Channel Temperature

Applications

? Avionics: Mode-S, TCAS, JTIDS, DME and TACAN.

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    MAGX-000912-SB0PPR

  • 制造商:

    MACOM Technology Solutions

  • 類別:

    開發(fā)板,套件,編程器 > 射頻評(píng)估和開發(fā)套件,開發(fā)板

  • 包裝:

  • 類型:

    晶體管

  • 頻率:

    960MHz ~ 1.215GHz

  • 配套使用/相關(guān)產(chǎn)品:

    MAGX-000912-125L00

  • 所含物品:

  • 描述:

    EVAL BOARD FOR MAGX-000912-125L0

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
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