MAS5104CE中文資料ZARLINK數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3μm technology.

The device has separate input and output terminals controlled by Chip Select and Write Enable. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state.

FEATURES

■ 3μm CMOS-SOS Technology

■ Latch-up Free

■ Fast Access Time 90ns Typical

■ Total Dose 106 Rad(Si)

■ Transient Upset >1010 Rad(Si)/sec

■ SEU <10-10 Errors/bitday

■ Single 5V Supply

■ Three State Output

■ Low Standby Current 10μA Typical

■ -55°C to +125°C Operation

■ All Inputs and Outputs Fully TTL or CMOS Compatible

■ Fully Static Operation