MAT12AHZ分立半導體產品的晶體管-雙極性晶體管（BJT）-陣列規(guī)格書PDF中文資料

MAT12AHZ屬于分立半導體產品的晶體管-雙極性晶體管（BJT）-陣列。由亞德諾半導體技術有限公司制造生產的MAT12AHZ晶體管 - 雙極性晶體管（BJT）- 陣列雙極晶體管陣列在同一封裝中包含兩個或更多的分立晶體管，這些晶體管可在電氣上完全隔離，也可在器件封裝內部以某種形式互連。陣列中包含的器件具有相近或互補的特性，采用共同封裝可最大程度減小器件在工作過程中的溫差。

GENERAL DESCRIPTION

The MAT12 is a dual, NPN-matched transistor pair that is specifically designed to meet the requirements of ultralow noise audio systems.

With its extremely low input base spreading resistance (rbb is typically 28 Ω) and high current gain (hFE typically exceeds 600 at IC = 1 mA), the MAT12 can achieve outstanding signal to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers.

Excellent matching of the current gain (ΔhFE) to about 0.5 and low VOS of less than 10 μV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion.

Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction.

The MAT12 is also an ideal choice for accurate and reliable current biasing and mirroring circuits. Furthermore, because the accuracy of a current mirror degrades exponentially with mismatches of VBE between transistor pairs, the low VOS of the MAT12 does not need offset trimming in most circuit applications.

FEATURES

Very low voltage noise: 1 nV/√Hz maximum @ 100 Hz

Excellent current gain match: 0.5 typical

Low offset voltage (VOS): 200 μV maximum

Outstanding offset voltage drift: 0.03 μV/°C typical

High gain bandwidth product: 200 MHz