MAX2163ETI

ISDB-T 1-Segment Tuner

MAX2163ETIV

ISDB-T 1-Segment Tuner

MAX2163ETI/V+

Package：28-WFQFN 裸露焊盤；包裝：管件 功能：調(diào)諧器 類別：RF/IF，射頻/中頻和 RFID RF 其它 IC 和模塊 描述：IC TUNER ISDB-T LOW IF 28TQFN

MAX2163ETI/V+T

Package：28-WFQFN 裸露焊盤；包裝：管件 功能：調(diào)諧器 類別：RF/IF，射頻/中頻和 RFID RF 其它 IC 和模塊 描述：IC TUNER ISDB-T LOW IF 28TQFN

MTN2163

SINGLEDIGITSEVENSEGMENTDISPLAY?

0.56DIGITSIZE-R.H.D.P. 0.63DIGITSIZE-L.H.D.P.

MTN2163-AG

SINGLEDIGITSEVENSEGMENTDISPLAY?

0.56DIGITSIZE-R.H.D.P. 0.63DIGITSIZE-L.H.D.P.

MTN2163-CG

SINGLEDIGITSEVENSEGMENTDISPLAY?

0.56DIGITSIZE-R.H.D.P. 0.63DIGITSIZE-L.H.D.P.

PIMXRT2163AVMAA

i.MXRT1170CrossoverProcessorsDataSheetforAutomotiveProducts

Features Thei.MXRT1170processorsarebasedonArmCortex?-M7Core?Platform,whichhasthefollowing features: ?TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7-M

RF2163

3V,2.5GHZLINEARPOWERAMPLIFIER

ProductDescription TheRF2163isalinear,mediumpower,highefficiencyamplifierICdesignedspecificallyforlowvoltageoperation.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifi

RF2163

3V,2.5GHzLINEARPOWERAMPLIFIER