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PVX6012PBF

IGBTPhotovoltaicRelaySinglePole,NormallyOpen,0-280VAC(RMS)or0-400VDC,1.0AAC/DC

GeneralDescription ThePVX6012PhotovoltaicRelayisasingle-pole,normallyopensolid-staterelaythatcanreplaceelectromechanicalrelaysinmanyapplications.ItutilizesanIGBToutputswitch,drivenbyanintegratedcircuitphotovoltaicgeneratorofnovelconstruction.Theoutputswitchi

IRF

International Rectifier

PWR6012

1.8WATTUNREGULATEDDC/DCCONVERTER

DESCRIPTION ThePWR60XXSeriesoffersalow-costalternativeforsomeofthemostpopularDC/DCconvertersindustrywide.Each modelhasverylownoiseandanoutstandingMTTF.Thesuperiorreliability,excellentfiltering,andlowcostmakeitan excellentchoiceforindustry-standardus

CANDD

C&D Technologies

PWR6012

1.8WATTREGULATEDDC/DCCONVERTER

DESCRIPTION ThePWR60XXSeriesoffersalow-costalternativeforsomeofthemostpopularDC/DCconvertersindustrywide.EachmodelhasverylownoiseandanoutstandingMTTF.Thesuperiorreliability,excellentfiltering,andlowcostmakeitanexcellentchoiceforindustry-standardusage.

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

R6012ANJ

10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy Applications Switching Structure SiliconN-channelMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

R6012ANJTL

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

R6012ANX

10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

R6012ANX

Nch600V12APowerMOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

R6012FNX

10VDriveNchMOSFET

Features 1)Fastreverserecoverytime(trr). 2)Lowon-resistance. 3)Fastswitchingspeed. 4)Gate-sourcevoltage(VGSS)guaranteedtobe?30V. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. 7)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

R6012FNX

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導(dǎo)體有限公司

R6012JNJ

Nch600V12APowerMOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號:

    MAX6012

  • 制造商:

    MAXIM

  • 制造商全稱:

    Maxim Integrated Products

  • 功能描述:

    Precision, Low-Power, Low-Dropout,

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MAXIM
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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MAXIM
25+
SOT23-3
50000
品牌一級代理,新加坡香港上百萬現(xiàn)貨,歡迎查詢!
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24+
3000
公司現(xiàn)貨
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Maxim
23+
SOT-23-3TO
29987
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MAXIM
17+
SOT23-3
6200
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MAXIM
05+
原廠原裝
4483
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MAX
23+
原裝正品
6500
絕對全新原裝!現(xiàn)貨!特價(jià)!請放心訂購!
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MAX
23+
SOT-23
6680
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ST
23+
SOT23-6
5000
原裝正品,假一罰十
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MAXIM
24+
SOT23-3
2250
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時(shí)可發(fā)貨
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更多MAX6012供應(yīng)商 更新時(shí)間2025-4-26 9:00:00