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MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR830

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀(jì)微電子股份有限公司

MBR830

SCHOTTKYBARRIERRECTIFIERS

FEATURES ●Metalofsiliconrectifier,majoritycarrierconduction ●Guardringfortransientprotection ●Lowpowerloss,highefficiency ●Highcurrentcapability,lowVF ●Highsurgecapacity ●PlasticpackagehasULflammabilityclassification94V-0 ●Foruseinlowvoltage,highfrequenc

HY

HY ELECTRONIC CORP.

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-8.0Amperes FEATURES ?TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ?Constructionutilizesvoid-freemoldedplastictechnique ?Lowreverseleakage ?Highforwardsurgecurrentcapability ?High

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達半導(dǎo)體深圳辰達半導(dǎo)體有限公司

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR830

SchottkyBarrierChip

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

SCHOTTKYBARRIERRECTIFIER

DSK

Diode Semiconductor Korea

MBR830

SCHOTTKYBARRIERRECTIFIERS

HY

HY ELECTRONIC CORP.

MBR830

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰達半導(dǎo)體深圳辰達半導(dǎo)體有限公司

MBR830

SchottkyBarrierRecitifiers

HY

HY ELECTRONIC CORP.

MBR830

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-Semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

FEATURES Metal-semiconductorjunctionwithguardring Epitaxialconstruction Lowforwardvoltagedrop,lowswitchinglosses Highsurgecapability Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionapplications TheplasticmaterialcarriesU/Lrecognition94

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

三陽電子三陽電子有限公司

詳細參數(shù)

  • 型號:

    MAX830CWE+

  • 功能描述:

    直流/直流開關(guān)調(diào)節(jié)器

  • RoHS:

  • 制造商:

    International Rectifier

  • 最大輸入電壓:

    21 V

  • 開關(guān)頻率:

    1.5 MHz

  • 輸出電壓:

    0.5 V to 0.86 V

  • 輸出電流:

    4 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PQFN 4 x 5

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原裝正品,假一罰十
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15年芯片行業(yè)經(jīng)驗/只供原裝正品:0755-83267371鄒小姐
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品牌一級代理,新加坡香港上百萬現(xiàn)貨,歡迎查詢!
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受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
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MAXIM/美信
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MAXIM
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68900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
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更多MAX830CWE+供應(yīng)商 更新時間2025-1-19 15:36:00