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AN-996

UsingtheFairchildFSTBusSwitchasa5Vto3VTranslator

Introduction FairchildFSTBusSwitchescanbeusedforbi-directionaltranslators.Theycaninterface5Vcomponentsto3Vcomponentswithnegligiblepropagationdelay(tPD≤250ps)andminimalpowerdissipation(ICC≤10μA). Asthenumberofsystemsthatinterfacebetween5Vand3.3Vlevelsinc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BF996S

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF996S

N-channeldual-gateMOS-FET

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BF996S

N-channeldual-gateMOS-FET

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF996S

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Lowfeedbackcapacitance ●Highcrossmodulationperformance ●Lowinputcapacitance ●HighAGC-range Applications InputandmixerstagesinUHFtuner.

Temic

TEMIC Semiconductors

BF996S

SiliconNChannelMOSFETTetrode(ForinputstagesinUHFTVtunersHightransconductanceLownoisefigure)

SiliconNChannelMOSFETTetrode ●ForinputstagesinUHFTVtuners ●Hightransconductance ●Lownoisefigure

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BF996S

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF996SA

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF996SB

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

F996

ATOBladeFuseRated32V

Littelfuselittelfuse

力特力特公司

詳細(xì)參數(shù)

  • 型號：

    MAX996ESD-T

  • 功能描述：

    校驗(yàn)器 IC Quad uPower Comparator

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 輸出類型：

    Push-Pull

  • 電源電壓-最大：

    5.5 V

  • 電源電壓-最?。?/span>

    1.1 V

  • 補(bǔ)償電壓（最大值）：

    6 mV

  • 電源電流（最大值）：

    1350 nA

  • 最大工作溫度：

    + 125 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    SC-70-5

  • 封裝：

    Reel

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