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MB84VD22184EE-90-PBS中文資料富士通數(shù)據(jù)手冊PDF規(guī)格書
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MB84VD22184EE-90-PBS規(guī)格書詳情
■ FEATURES
? Power supply voltage of 2.7 to 3.3 V
? High performance
90 ns maximum access time (Flash)
85 ns maximum access time (SRAM)
? Operating Temperature
–25 to +85°C
? Package 73-ball BGA
1.FLASH MEMORY
? Simultaneous Read/Write operations (dual bank)
Miltiple devices available with different bank sizes
Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
Zero latency between read and write operations
Read-while-erase
Read-while-program
? Minimum 100,000 write/erase cycles
? Sector erase architecture
Eight 4 K words and sixty three 32 K words.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
? Boot Code Sector Architecture
MB84VD2218X: Top sector
MB84VD2219X: Bottom sector
? Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
? Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
? Data Polling and Toggle Bit feature for detection of program or erase cycle completion
? Ready-Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
? Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode.
? Low VCCf write inhibit ≤ 2.5 V
? Hidden ROM (Hi-ROM) region
64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
? WP/ACC input pin
At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
(MB84VD2218XEC/EE:SA69,SA70 MB84VD2219XEC/EE:SA0,SA1)
At VIH, allows removal of boot sector protection
At VACC, program time will reduse by 40.
? Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
? Please refer to “MBM29DL32XTE/BE” data sheet in detailed function
2.SRAM
? Power dissipation
Operating : 50 mA max.
Standby : 15 μA max.
? Power down features using CE1s and CE2s
? Data retention supply voltage: 1.5 V to 3.3 V
? CE1s and CE2s Chip Select
? Byte data control: LBs(DQ0-DQ7), UBs(DQ8-DQ15)
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FUJ |
17+ |
BGA |
9888 |
全新進口原裝,現(xiàn)貨庫存 |
詢價 | ||
FUJITSU/富士通 |
2022 |
BGA |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
FUJI/富士電機 |
04+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
FUJITSU |
BGA |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
FUJITSU |
NA |
8560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
SPANSION |
1844+ |
LQFP |
9852 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IR |
23+ |
TO220 |
12000 |
全新原裝假一賠十 |
詢價 | ||
FUJ |
24+ |
BGA |
167 |
詢價 | |||
FUJITSU |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
FUJITSU |
23+ |
BGA |
3000 |
全新原裝現(xiàn)貨 優(yōu)勢庫存 |
詢價 |