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MBM29DL800TA-70PFTR中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書

MBM29DL800TA-70PFTR
廠商型號(hào)

MBM29DL800TA-70PFTR

功能描述

FLASH MEMORY CMOS 8M (1M x 8 / 512K x 16) BIT

文件大小

601.93 Kbytes

頁(yè)面數(shù)量

57 頁(yè)

生產(chǎn)廠商 SPANSION
企業(yè)簡(jiǎn)稱

spansion飛索

中文名稱

飛索半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-19 16:10:00

MBM29DL800TA-70PFTR規(guī)格書詳情

■ GENERAL DESCRIPTION

The MBM29DL800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29DL800TA/BA are offered in a 48-pin TSOP(I) and 48-ball FBGA packages. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

■ FEATURES

? Single 3.0 V read, program, and erase

Minimizes system level power requirements

? Simultaneous operations

Read-while-Erase or Read-while-Program

? Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

? Compatible with JEDEC-standard world-wide pinouts (Pin compatible with MBM29LV800TA/BA)

48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)

48-ball FBGA (Package suffix: PBT)

? Minimum 100,000 program/erase cycles

? High performance

70 ns maximum access time

? Sector erase architecture

Two 16K byte, four 8K bytes, two 32K byte, and fourteen 64K bytes.

Any combination of sectors can be concurrently erased. Also supports full chip erase.

? Boot Code Sector Architecture

T = Top sector

B = Bottom sector

? Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

? Embedded ProgramTM Algorithms

Automatically writes and verifies data at specified address

? Data Polling and Toggle Bit feature for detection of program or erase cycle completion

? Ready/Busy output (RY/BY)

Hardware method for detection of program or erase cycle completion

? Automatic sleep mode

When addresses remain stable, automatically switch themselves to low power mode.

? Low VCC write inhibit ≤ 2.5 V

? Erase Suspend/Resume

Suspends the erase operation to allow a read in another sector within the same device

? Sector protection

Hardware method disables any combination of sectors from program or erase operations

? Sector Protection Set function by Extended sector protection command

? Fast Programming Function by Extended Command

? Temporary sector unprotection

Temporary sector unprotection via the RESET pin.

產(chǎn)品屬性

  • 型號(hào):

    MBM29DL800TA-70PFTR

  • 制造商:

    SPANSION

  • 制造商全稱:

    SPANSION

  • 功能描述:

    FLASH MEMORY CMOS 8M(1M x 8/512K x 16) BIT

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