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MBM29F040A-90-X

FLASH MEMORY CMOS 4M 512K X 8 BIT

FujitsuFujitsu Component Limited.

富士通富士通株式會社

EN29F040A-90JC

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90JCP

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90JI

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90JIP

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90PC

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90PCP

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90PI

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90PIP

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90TC

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90TCP

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90TI

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

EN29F040A-90TIP

4Megabit(512Kx8-bit)FlashMemory

GENERALDESCRIPTION TheEN29F040Aisa4-Megabit,electricallyerasable,read/writenon-volatileflashmemory.Organizedinto512Kwordswith8bitsperword,the4Mofmemoryisarrangedineightuniformsectorsof64Kbyteseach.Anybytecanbeprogrammedtypicallyin10μs.TheEN29F040Afeatur

EON

Eon Silicon Solution Inc.

詳細參數(shù)

  • 型號:

    MBM29F040A-90-X

  • 制造商:

    FUJITSU

  • 制造商全稱:

    Fujitsu Component Limited.

  • 功能描述:

    FLASH MEMORY CMOS 4M 512K X 8 BIT

供應商型號品牌批號封裝庫存備注價格
FUJITSU
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FUJI
2020+
PLCC
35000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
FUJ
24+
PLCC32
190
詢價
FUJITSU
22+
PLCC32
2568
原裝優(yōu)勢!絕對公司現(xiàn)貨
詢價
FUJS
23+
PLCC
9516
詢價
SPANSION
1844+
LQFP
9852
只做原裝正品假一賠十為客戶做到零風險!!
詢價
FUJITSU
2020+
PLCC32
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
FUJITSU
23+
PLCC32
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
詢價
FUJITSU
22+
PLCC32
28600
只做原裝正品現(xiàn)貨假一賠十一級代理
詢價
FUJITSU
23+
PLCC32
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多MBM29F040A-90-X供應商 更新時間2024-11-14 11:02:00