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MBM29LV160B-90PBT

16M (2M x? 8/1M x 16) BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PBT

FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160B-90PBT-SF2

16M (2M x? 8/1M x 16) BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

EN29LV160B-90B

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90T

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

MBM29LV160B-90

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160B-90

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PCV

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160B-90PCV

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PFTN

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PFTN

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160B-90PFTR

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160B-90PFTY

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MBM29LV160B-90PN

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會社

詳細(xì)參數(shù)

  • 型號:

    MBM29LV160B-90PBT

  • 制造商:

    SPANSION

  • 制造商全稱:

    SPANSION

  • 功能描述:

    FLASH MEMORY CMOS 16M(2M x 8/1M x 16) BIT

供應(yīng)商型號品牌批號封裝庫存備注價格
FUJITSU
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
FUJITSU
2020+
TSOP
400
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
FUJITSU
23+
TSOP
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
FUJITSU
00+
TSOP
400
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
FUJITSU
24+
TSOP
2560
絕對原裝!現(xiàn)貨熱賣!
詢價
24+
3000
公司現(xiàn)貨
詢價
FUJITSU
22+23+
TSOP
40371
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價
FUJITSU
2023+
TSOP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
FUJITSU/富士通
23+
TSOP
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
FUJITSU/富士通
23+
TSOP
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價
更多MBM29LV160B-90PBT供應(yīng)商 更新時間2025-1-17 14:26:00