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MBM29LV160T-90PFTY

16M (2M x? 8/1M x 16) BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

EN29LV160T-90B

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90BI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90BIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90BP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90T

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90TI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90TIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160T-90TP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8μs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

MBM29LV160T-90

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MBM29LV160T-90

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160T-90PBT

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MBM29LV160T-90PBT

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160T-90PCV

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160T-90PCV

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MBM29LV160T-90PFTN

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MBM29LV160T-90PFTN

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160T-90PFTR

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飛索飛索半導(dǎo)體

MBM29LV160T-90PN

16M(2Mx?8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    MBM29LV160T-90PFTY

  • 制造商:

    FUJITSU

  • 制造商全稱:

    Fujitsu Component Limited.

  • 功能描述:

    16M(2M xⅴ 8/1M x 16) BIT

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FUJITSU
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
FUJITSU
22+
N/A
4897
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
詢價(jià)
FUJITSU/富士通
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FUJITSU/富士通
22+
SMD
25000
只做原裝,原裝,假一罰十
詢價(jià)
FUJITSU
2000
BGA
1350
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
詢價(jià)
FUJITSU
22+
QFN
28600
只做原裝正品現(xiàn)貨假一賠十一級(jí)代理
詢價(jià)
FUJITSU
21+
QFN
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)
詢價(jià)
FUJITSU
23+
QFN
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FUJITSU
SMD
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
FUJITSU/富士通
23+
QFN
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價(jià)
更多MBM29LV160T-90PFTY供應(yīng)商 更新時(shí)間2024-11-14 11:02:00