MBM29LV650UE12TN中文資料富士通數(shù)據(jù)手冊PDF規(guī)格書

■ DESCRIPTION

The MBM29LV650UE/651UE is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

■ FEATURES

? 0.23 μm Process Technology

? Single 3.0 V read, program and erase

Minimizes system level power requirements

? Compatible with JEDEC-standards

Uses same software commands with single-power supply Flash

? Address don’t care during the command sequence

? Industry-standard pinouts

48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)

? Minimum 100,000 program/erase cycles

? High performance

90 ns maximum access time

? Flexible sector architecture

One hundred twenty-eight 32K word sectors

Any combination of sectors can be concurrently erased. Also supports full chip erase

? Hidden ROM (Hi-ROM) region

128 word of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence

Factory serialized and protected to provide a secure electronic serial number (ESN)

? WP input pin

At VIL, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status

At VIH, allows removal of protection

MBM29LV650UE: has the function to protect the last 32K word sector (SA 127)

MBM29LV651UE: has the function to protect the first 32K word sector (SA 0)

? ACC input pin

At VACC, increases program performance

? Embedded EraseTM* Algorithms

Automatically pre-programs and erases the chip or any sector

? Embedded programTM* Algorithms

Automatically writes and verifies data at specified address

? Data Polling and Toggle Bit feature for detection of program or erase cycle completion

? Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

? Low VCC write inhibit ≤ 2.5 V

? Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

? Sector group protection

Hardware method disables any combination of sector groups from program or erase operations

? Sector Group Protection Set function by Extended sector protect command

? Fast Programming Function by Extended Command

? Temporary sector group unprotection

Temporary sector group unprotection via the RESET pin

This feature allows code changes in previously locked sectors

? In accordance with CFI (Common Flash Memory Interface)