MBM29PL3200BE90PFV中文資料富士通數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

DESCRIPTION

The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. (Continued

FEATURES

? 0.23 μm Process Technology

? Single 3.0 V read, program and erase

Minimized system level power requirements

? High Performance Page Mode

25 ns maximum page access time (70 ns random access time)

? 8 words Page ( × 16) /4 double words ( × 32) size

? Compatible with JEDEC-standard commands

Uses same software commands as E2PROMs

? Compatible with JEDEC-standard world-wide pinouts

90-pin SSOP (Package suffix : PFV)

84-ball FBGA (Package suffix : PBT)

? Minimum 100,000 program/erase cycles

? Sector erase architecture

One 16 K word, two 8 K words, one 96 K word, and fifteen 128 K words sectors in word mode ( × 16)

One 8 K double word, two 4 K double words, one 48 K double word, and fifteen 64 K double words sectors in double word mode ( × 32)

Any combination of sectors can be concurrently erased. Also supports full chip erase

? Boot Code Sector Architecture

T = Top sector

B = Bottom sector

? Embedded EraseTM Algorithms

Automatically pre-programs and erases the chip or any sector

? Embedded ProgramTM Algorithms

Automatically programs and verifies data at specified address

? Data Polling and Toggle Bit feature for detection of program or erase cycle completion

? Automatic sleep mode

When addresses remain stable, automatically switches themselves to low power mode

? Low VCC write inhibit ≤ 2.5 V

? Erase Suspend/Resume

Suspends the erase operation to allow a read data and/or program in another sector within the same device

? Sector protection

Hardware method disables any combination of sectors from program or erase operations

? Fast Programming Function by Extended command

? Temporary sector unprotection

Temporary sector unprotection with the software command

? In accordance with CFI (Common Flash Memory Interface)