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MSRT25060

THREETOWERMODULESSTANDARDRECTIFIERS

AMERICASEMI

America Semiconductor, LLC

MSRT25060A

THREETOWERMODULESSTANDARDRECTIFIERS

AMERICASEMI

America Semiconductor, LLC

XF25060B

INDUCTORS

XFMRS

XFMRS,Inc.

XF25060B

INDUCTORS

XFMRS

XFMRS,Inc.

ZXTN25060BFH

60V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

Zetex

Zetex Semiconductors

ZXTN25060BFH

60V,SOT23,NPNmediumpowertransistor

Features ?BVCEO>60V ?BVCEX>150V ?BVECO>6V ?IC=3.5AhighContinuousCollectorCurrent ?VCE(SAT)

DIODES

Diodes Incorporated

ZXTN25060BFHTA

60V,SOT23,NPNmediumpowertransistor

Features ?BVCEO>60V ?BVCEX>150V ?BVECO>6V ?IC=3.5AhighContinuousCollectorCurrent ?VCE(SAT)

DIODES

Diodes Incorporated

ZXTN25060BFHTA

60V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Highpowerdissip

Zetex

Zetex Semiconductors

ZXTN25060BZ

60V,SOT89,NPNmediumpowertransistor

Description PackagedintheSOT89outlinethisnewlowsaturation60VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?Extremelylowequivalentonresistance;RCE(sat)=46mΩat5A ?5a

Zetex

Zetex Semiconductors

ZXTN25060BZ

60V,SOT89,NPNmediumpowertransistor

Features ?BVCEO>60V ?IC=5AContinuousCollectorCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN25060BZQ

60VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features ?BVCEX>150V ?BVCEO>60V ?BVECO>6V ?IC=5AContinuousCollectorCurrent ?VCE(sat)

DIODES

Diodes Incorporated

ZXTN25060BZQTA

60VNPNMEDIUMPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features ?BVCEX>150V ?BVCEO>60V ?BVECO>6V ?IC=5AContinuousCollectorCurrent ?VCE(sat)

DIODES

Diodes Incorporated

ZXTN25060BZTA

60V,SOT89,NPNmediumpowertransistor

Features ?BVCEO>60V ?IC=5AContinuousCollectorCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN25060BZTA

60V,SOT89,NPNmediumpowertransistor

Description PackagedintheSOT89outlinethisnewlowsaturation60VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features ?Extremelylowequivalentonresistance;RCE(sat)=46mΩat5A ?5a

Zetex

Zetex Semiconductors

ZXTP25060BFH

60V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Higherpowerdiss

Zetex

Zetex Semiconductors

ZXTP25060BFH

60V,SOT23,PNPmediumpowertransistor

FeaturesandBenefits ?BVCEO>-60VBreakdownVoltage ?100Vforwardblockingvoltage ?IC=-3AContinuousCollectorCurrent, ?ICM=-9APeakPulseCurrent, ?Lowsaturationvoltage,VCE(sat)

DIODES

Diodes Incorporated

ZXTP25060BFHTA

60V,SOT23,PNPmediumpowertransistor

FeaturesandBenefits ?BVCEO>-60VBreakdownVoltage ?100Vforwardblockingvoltage ?IC=-3AContinuousCollectorCurrent, ?ICM=-9APeakPulseCurrent, ?Lowsaturationvoltage,VCE(sat)

DIODES

Diodes Incorporated

ZXTP25060BFHTA

60V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features ?Higherpowerdiss

Zetex

Zetex Semiconductors

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更多MBR25060V供應(yīng)商 更新時(shí)間2024-11-15 16:30:00