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MBT3904DW1T1G中文資料安森美半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

MBT3904DW1T1G
廠商型號

MBT3904DW1T1G

功能描述

Dual General Purpose Transistors

文件大小

137.55 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 ON Semiconductor
企業(yè)簡稱

ONSEMI安森美半導(dǎo)體

中文名稱

安森美半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-16 17:45:00

MBT3904DW1T1G規(guī)格書詳情

The MBT3904DW1 and MBT3904DW2 devices are a spin?off of our popular SOT?23/SOT?323 three?leaded device. It is designed for general purpose amplifier applications and is housed in the SOT?363 six?leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low?power surface mount applications where board space is at a premium.

Features

? hFE, 100?300

? Low VCE(sat), ≤ 0.4 V

? Simplifies Circuit Design

? Reduces Board Space

? Reduces Component Count

? Available in 8 mm, 7?inch/3,000 Unit Tape and Reel

? S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

產(chǎn)品屬性

  • 型號:

    MBT3904DW1T1G

  • 功能描述:

    兩極晶體管 - BJT 200mA 60V Dual NPN

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風(fēng)格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
原裝
24+
標(biāo)準(zhǔn)
41410
熱賣原裝進(jìn)口
詢價
onsemi
1243+
SOT363
5337
全新原裝
詢價
Onsemi
23+
SOT363
15000
只做原裝正品,假一罰十。
詢價
ON/安森美
24+
SOT-363
2200
絕對原廠原裝,長期優(yōu)勢可定貨
詢價
ON
SOT-363
3439099
集團(tuán)化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
詢價
ON/安森美
22+
SMD
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價
ON Semiconductor Corporation
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
詢價
ON
21+
SOT23
378000
詢價
SOT-363
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
詢價