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MBT3904L

SWITCHING TRANSISTOR NPN TRANSISTOR

DESCRIPTION TheMBT3904LisavailableinSOT-23Package. FEATURES ?AvailableinSOT-23Package.

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

MBT3904T

SWITCHINGTRANSISTORNPNTRANSISTOR

DESCRIPTION The MBT3904TisavailableinSC89package. FEATURES ?SimplifiesCircuitDesign. ?AvailableinSC89package

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

MBT3904W

SWITCHINGTRANSISTORSGENERALPURPOSETRANSISTORS

DESCRIPTION Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC–70whichisdesignedforlowpowersurfacemountapplications. The MBT3904WisavailableinSC70package FEATURES ?ROHScompliance ?AvailableinSC70package

AITSEMIAiT Semiconductor Inc.

創(chuàng)瑞科技AiT創(chuàng)瑞科技

MMBT3904

NPNGeneralPurposeAmplifier

Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

40VNPNSMALLSIGNALTRANSISTORINSOT23 Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable(MMBT3906) ?IdealforMediumPowerAmplificationandSwitching ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Devic

DIODES

Diodes Incorporated

MMBT3904

SmallSignalTransistors(NPN)

FEATURES ◆NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications. ◆Ascomplementarytype,thePNP transistorMMBT3906isrecommended. ◆ThistransistorisalsoavailableintheTO-92 casewiththetypedesignation2N3904.

GE

GE Industrial Company

MMBT3904

NPNGeneralPurposeAmplifier

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?Capableof350mWattsofPowerDissipationand200mAIc. ?OperatingandStorageJunctionTemperatures:-55°Cto150°C ?SurfaceMountSOT-23Package ?LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MMBT3904

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?EpitaxialPlanarDieConstruction ?ComplementaryPNPTypeAvailable (MMBT3906) ?IdealforMediumPowerAmplificationand Switching

TRSYS

Transys Electronics

MMBT3904

GENERALPURPOSETRANSISTORNPNSILICON

GeneralPurposeTransistor NPNSilicon

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

MMBT3904

GENERALPURPOSEAMPLIFIERTRANSISTORSSURFACEMOUNT

GeneralPurposeTransistors NPNandPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT?323/SC?70packagewhichisdesignedforlowpowersurfacemountapplications. Features ?AEC?Q101QualifiedandPPAPCapable ?SPrefixforAut

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMBT3904

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistors ?HighDCcurrentgain:0.1mAto100mA ?Lowcollector-emittersaturationvoltage ?ForSMBT3904S: Two(galvanic)internalisolatedtransistors withgoodmatchinginonepackage ?Complementarytypes:SMBT3906...MMBT3906 ?SMBT3904S:Fororientat

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MMBT3904

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon P/bLead(Pb)-Free

WEITRON

Weitron Technology

MMBT3904

GENERALPURPOSEAPPLIATION

GENERALPURPOSEAPPLIATION ■FEATURES *Collector-EmitterVoltage:VCEO=40V *CollectorDissipation:PD(MAX)=350mW *ComplementarytoUTCMMBT3906

UTCUnisonic Technologies

友順友順科技股份有限公司

MMBT3904

NPNGeneralPurposeAmplifier

NSCNational Semiconductor (TI)

美國(guó)國(guó)家半導(dǎo)體美國(guó)國(guó)家半導(dǎo)體公司

MMBT3904

SMDGeneralPurposeTransistor(NPN)

SMDGeneralPurposeTransistor(NPN) Features ?NPNSiliconEpitaxialPlanarTransistorfor SwitchingandAmplifierApplications ?RoHScompliance

TAITRON

TAITRON Components Incorporated

MMBT3904

NPNSWITCHINGTRANSISTOR

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable (MMBT3906). ●CollectorCurrentCapabilityICM=200mA. ●Collector-emitterVoltageVCEO=40V. APPLICATIONS ●Generalswitchingandamplification

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

MMBT3904

NPNGENERALPURPOSESWITCHINGTRANSISTOR

FEATURES ?NPNepitaxialsilicon,planardesign ?Collector-emittervoltageVCE=40V ?CollectorcurrentIC=200mA ?Pbfreeproductareavailable:99SnabovecanmeetRohsenvironmentsubstancedirectiverequest

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

MMBT3904

0.2WattsNPNPlastic-EncapsulateTransistors

FEATURES -Epitaxialplanardieconstruction -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free)

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

MMBT3904

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor forswitchingandamplifierapplications. AscomplementarytypesthePNPtransistors MMBT3906isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司

MMBT3904

NPNGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

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ONLRC
22+
SOT-23
27102
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TOSHIBA/東芝
23+
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13000
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8560
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ON/ONSemiconductor/安森
24+
SOT-363/SOT-323-6
6200
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SOT-363
23+
NA
15659
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原裝ON
2023+
SOT-363
80000
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1000
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ON
22+
SOT-363
28600
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ST
2021++
TO-3P
10000
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ON/安森美
23+
SOT-363
50000
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更多MBT3904L供應(yīng)商 更新時(shí)間2024-11-16 14:20:00

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