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MC-4516CA726EF-A80中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
| 廠商型號(hào) |
MC-4516CA726EF-A80 |
| 功能描述 | 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE |
| 文件大小 |
149.72 Kbytes |
| 頁(yè)面數(shù)量 |
16 頁(yè) |
| 生產(chǎn)廠商 | Renesas Electronics America |
| 企業(yè)簡(jiǎn)稱 |
NEC【瑞薩】 |
| 中文名稱 | 日本瑞薩電子株式會(huì)社官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-2-20 22:50:00 |
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Description
The MC-4516CA726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: μPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
? 16,777,216 words by 72 bits organization (ECC Type)
? Clock frequency and access time from CLK
? Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
? Pulsed interface
? Possible to assert random column address in every cycle
? Quad internal banks controlled by BA0 and BA1 (Bank Select)
? Programmable burst-length (1, 2, 4, 8 and full page)
? Programmable wrap sequence (sequential / interleave)
? Programmable /CAS latency (2, 3)
? Automatic precharge and controlled precharge
? CBR (Auto) refresh and self refresh
? All DQs have 10 ? ±10 of series resistor
? Single 3.3 V ± 0.3 V power supply
? LVTTL compatible
? 4,096 refresh cycles/64 ms
? Burst termination by Burst Stop command and Precharge command
? 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
? Unbuffered type
? Serial PD
產(chǎn)品屬性
- 型號(hào)：
MC-4516CA726EF-A80
- 制造商：
NEC
- 制造商全稱：
NEC
- 功能描述：
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
