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MC-4564EC726EFB-A10中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

MC-4564EC726EFB-A10
廠商型號(hào)

MC-4564EC726EFB-A10

功能描述

64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

文件大小

292.33 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Renesas Electronics America
企業(yè)簡(jiǎn)稱(chēng)

NEC瑞薩

中文名稱(chēng)

日本瑞薩電子株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-3-10 12:55:00

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MC-4564EC726EFB-A10規(guī)格書(shū)詳情

Description

The MC-4564EC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: μPD45128441 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

? 67,108,864 words by 72 bits organization (ECC type)

? Clock frequency and access time from CLK

? Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

? Pulsed interface

? Possible to assert random column address in every cycle

? Quad internal banks controlled by BA0 and BA1 (Bank Select)

? Programmable burst-length (1, 2, 4, 8 and Full Page)

? Programmable wrap sequence (Sequential / Interleave)

? Programmable /CAS latency (2, 3)

? Automatic precharge and controlled precharge

? CBR (Auto) refresh and self refresh

? All DQs have 10 ? ± 10 of series resistor

? Single 3.3 V ± 0.3 V power supply

? LVTTL compatible

? 4,096 refresh cycles / 64 ms

? Burst termination by Burst Stop command and Precharge command

? 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

? Registered type

? Serial PD

? Stacked monolithic technology

產(chǎn)品屬性

  • 型號(hào):

    MC-4564EC726EFB-A10

  • 制造商:

    NEC

  • 制造商全稱(chēng):

    NEC

  • 功能描述:

    64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE

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