首頁>MC-458CB641ES>規(guī)格書詳情
MC-458CB641ES中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多- MC-458CA727
- MC-458CA721PSA-A80
- MC-458CA726EFB-A80
- MC-458CA727EFA-A75
- MC-458CA726EFB-A10
- MC-458CA727PFA-A75
- MC-458CA726PFB-A10
- MC-458CA726
- MC-458CA721PSA-A10
- MC-458CA721PSA
- MC-458CA726PFB-A80
- MC-458CA727PFA-A75
- MC-458CA726PFB-A80
- MC-458CA721XSA-A80
- MC-458CA726PFB-A10
- MC-458CA727
- MC-458CA727EFA-A75
- MC-458CA721XSA
MC-458CB641ES規(guī)格書詳情
Description
The MC-458CB641ES and MC-458CB641PS are 8,388,608 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: μPD45128163 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
? 8,388,608 words by 64 bits organization
? Clock frequency and access time from CLK
? Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
? Pulsed interface
? Possible to assert random column address in every cycle
? Quad internal banks controlled by BA0, BA1 (Bank Select)
? Programmable burst-length: 1, 2, 4, 8 and Full Page
? Programmable wrap sequence (Sequential / Interleave)
? Programmable /CAS latency (2, 3)
? Automatic precharge and controlled precharge
? CBR (Auto) refresh and self refresh
? Single 3.3V ±0.3V power supply
? LVTTL compatible
? 4,096 refresh cycles/64 ms
? Burst termination by Burst Stop command and Precharge command
? 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)
? Unbuffered type
? Serial PD
產(chǎn)品屬性
- 型號:
MC-458CB641ES
- 制造商:
NEC
- 制造商全稱:
NEC
- 功能描述:
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM